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In the field of wafer manufacturing, Vetek semiconductor’s focus ring plays a key role. It is not just a simple component, but plays a vital role in the plasma etching process. First, the plasma etchig focus ring is designed to ensure that the wafer is firmly held in the desired position, thus ensuring the accuracy and stability of the etching process. By holding the wafer in place, the focusing ring effectively maintains the uniformity of plasma density, which is essential for the success of the etching process.

In addition, the focus ring also plays an important role in preventing side contamination of the wafer. The quality and purity of wafers are critical to chip manufacturing, so all necessary measures must be taken to ensure that wafers remain clean throughout the etching process. The focus ring effectively prevents external impurities and contaminants from entering the sides of the wafer surface, thus ensuring the quality and performance of the final product.

In the past, focusing rings were mainly made of quartz and silicon. However, with the increase of dry etching in advanced wafer manufacturing, the demand for focusing rings made of silicon carbide (SiC) is also rising. Compared to pure silicon rings, SiC rings are more durable and have a longer service life, thus reducing production costs. Silicon rings need to be replaced every 10 to 12 days, while SiC rings are replaced every 15 to 20 days. At present, some large companies such as Samsung are studying the use of boron carbide ceramics (B4C) instead of SiC. B4C has a higher hardness, so the unit lasts longer.

In a plasma etching equipment, the installation of a focus ring is necessary for plasma etching of the substrate surface on a base in a treatment vessel. The focusing ring surrounds the substrate with a first region on the inner side of its surface that has a small average surface roughness to prevent the reaction products generated during etching from being captured and deposited. 

At the same time, the second region outside the first region has a large average surface roughness to encourage the reaction products generated during the etching process to be captured and deposited. The boundary between the first region and the second region is the part where the amount of etching is relatively significant, equipped with a focusing ring in the plasma etching device, and plasma etching is performed on the substrate.

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